10x10x0.45 mm InSb wafer (P type, Ge doped)
- Size: 5x5x0.45 mm
- Orientation <100> /-0.5o with two reference flats
- Polishing: two sides polishd
- Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room
Properties
Properties
- Growth method LEC
- Orientation (100) /- 0.5 o
- Orientation Flat N/A
- Doping Ge
- Conductivity type P Type
- Carrier Concentration 1.35x10^15/cc @77K
- Mobility 6300 cm2/Vs
- EPD <=200 / cm 2
- Resistivity: 7.34E-1 ohm.cm
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